Related papers: Low Frequency Electronic Noise in Single-Layer MoS…
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…
Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and…
Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in…
Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for…
In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…
The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components…
Many monolayer transition metal dichalcogenides, including MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, are direct bandgap two-dimensional (2D) semiconductors with sharp optical resonances at excitonic bound state frequencies. Recent experiments…
The accurate analytical solution for the low temperature $1/f$ noise in a microwave dielectric constant of amorphous films containing tunneling two-level systems (TLSs) is derived within the standard tunneling model including the weak…
We report a direct measurement of the low-frequency noise spectrum in a superconducting flux qubit. Our method uses the noise sensitivity of a free-induction Ramsey interference experiment, comprising free evolution in the presence of noise…
We have measured the 1S - 2S transition frequency in atomic hydrogen via two photon spectroscopy on a 5.8 K atomic beam. We obtain $f_{1S-2S} = 2 466 061 413 187 035 (10)$ Hz for the hyperfine centroid. This is a fractional frequency…
Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel…
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…
The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island…
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects…
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…
Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…
We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108,…