Related papers: Low Frequency Electronic Noise in Single-Layer MoS…
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…
It is shown here that $1/f^\alpha$ flux noise in conventional low-T$_c$ SQUIDs is a result of low temperature superparamagnetic phase transitions in small clusters of strongly correlated color center defects. The spins in each cluster…
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…
At low temperatures electron hopping in a three dimensional Coulomb glass produces fluctuations in the single particle density of states and hence in the resistivity. This results in a low frequency resisitivity noise spectrum which goes as…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…
Nanomechanical resonators promise diverse applications ranging from mass spectrometry to quantum information processing, requiring long phonon lifetimes and frequency stability. Although two-level system (TLS) defects govern dissipation at…
The performance of superconducting devices like qubits, SQUIDs, and particle detectors is often limited by finite coherence times and 1/f noise. Various types of slow fluctuators in the Josephson junctions and the passive parts of these…
We report on long-term measurements of a highly coherent, non-tunable superconducting transmon qubit, revealing low-frequency burst noise in coherence times and qubit transition frequency. We achieve this through a simultaneous measurement…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…
Simple analytically solvable model of 1/f noise is proposed. The model consists of one or few particles moving in the closed contour. The drift period of the particle round the contour fluctuates about some average value, e.g. due to the…
We propose a model for 1/f flux noise in superconducting devices (f is frequency). The noise is generated by the magnetic moments of electrons in defect states which they occupy for a wide distribution of times before escaping. A trapped…
We studied the noise spectra of molecule-free and molecule-containing mechanically controllable break junctions. Both types of junctions revealed typical 1/ f noise characteristics at different distances between the contacts with square…
Scattering of charge carriers and flicker noise in electrical transport are the central performance limiting factors in electronic devices, but their microscopic origin in molybdenum disulphide~(MoS$_2$)-based field effect transistors…
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This…
The thermal, mechanical, and electronic performance of atomically thin semiconductors is governed by their low-energy phonons, yet the impact of atomic-scale disorder on these modes remains poorly understood. Here, we report the first…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier…
We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized…
We show that 1/f noise in a two-dimensional electron gas with hopping conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the…