Related papers: Hetero-epitaxial EuO Interfaces Studied by Analyti…
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance…
Novel imaging spin-filter techniques, which are based on low energy electron diffraction, are currently of high scientific interest. To improve the spin-detection efficiency a variety of new materials have been introduced in recent years. A…
Oxide interfaces feature unique two-dimensional (2D) electronic systems with diverse electronic properties such as tunable spin-orbit interaction and superconductivity. Conductivity emerges in these interfaces when the thickness of an…
We investigate the spin-valley polarization in MoTe$_2$ monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider surface reconstructions for EuO(111). We find that there is…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both…
Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficiency of spin-orbit torque technologies. Here we report that…
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly…
High spin systems, like those that incorporate rare-earth $4f$ elements (REEs), are increasingly relevant in many fields. Although research in such systems is sparse, the large Hilbert spaces they occupy are promising for many applications.…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers.…
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows…
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow…
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces…
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…
The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the plasma assisted molecular beam epitaxy (PA MBE) method. The…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…