Related papers: Electron-electron interaction correction and magne…
We calculate the interaction kernel K for two-dimensional diffusive electrons. The screening of the Coulomb interaction together with the Fermi statistics induces a spin selection rule for electron-electron scattering so that in leading…
We consider determination of spin-orbit (SO) coupling constants for the two-dimensional electron gas from measurements of electric properties in rotated in-plane magnetic field. %Due to the interplay Due to the SO coupling the electron…
Transport in an ideal two-dimensional quantum spin Hall device is dominated by the counterpropagating edge states of electrons with opposite spins, giving the universal value of the conductance, $2e^2/h$. We study the effect on the…
The effect of electric field, applied on systems in the nanoscale regime has attracted a lot of research in recent times. We highlight some of the recent results in the field of single molecule electronics and then move on to focus on some…
The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq…
We study the effect of electron-electron interaction on the surface resistivity of three-dimensional (3D) topological insulators. In the absence of umklapp scattering, the existence of the Fermi-liquid ($T^2$) term in resistivity of a…
The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening…
The zero-temperature magnetic field-dependent conductance of electrons through a one-dimensional non-interacting tight-binding chain with an interacting {\it side} dot is reviewed and analized further. When the number of electrons in the…
The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of…
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…
We consider a one-dimensional spin-orbit-coupled nanowire quantum dot, driven by external electric and magnetic fields, and theoretically formulate an electric mechanism to interfere its electron orbits. Owing to the existence of spin-orbit…
At low temperatures, the transport coefficients in the disordered electron gas acquire quantum corrections as a result of the complex interplay of disorder and interactions. The interaction corrections to the electric conductivity have…
Novel materials, which often exhibit surprising or even revolutionary physical properties, are necessary for critical advances in technologies. Simultaneous control of structural and physical properties via a small electrical current is of…
Motivated by a need to understand spin-momentum transport in CPP (current perpendicular to the plane) structures, a quantum field theoretical treatment of spin-spin interactions in ferromagnets is presented. The sd interaction of the…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
Gapless surface states that are protected by time reversal symmetry and charge conservation are among the manifestations of 3D topological insulators. In this work we study how electron-electron interaction may lead to spontaneous breaking…
An expression for the conductance of interacting electrons in the diffusive regime as a function of the ensemble averaged persistent current and the compressibility of the system is presented. This expression involves only ground-state…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was…
We present a nonperturbative approach which allows to evaluate the weak localization correction to the conductivity of disordered conductors in the presence of interactions. The effect of the electron-electron interaction on the…