English

Electron-electron interaction at decreasing $k_Fl$

Disordered Systems and Neural Networks 2008-12-02 v1

Abstract

The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to kFl1.52k_F l\simeq 1.5-2, where kFk_F is the Fermi quasimomentum, ll is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with kFlk_Fl decrease.

Keywords

Cite

@article{arxiv.cond-mat/0209584,
  title  = {Electron-electron interaction at decreasing $k_Fl$},
  author = {G. M. Minkov and O. E. Rut and A. V. Germanenko and A. A. Sherstobitov and V. I. Shashkin and O. I. Khrykin and B. N. Zvonkov},
  journal= {arXiv preprint arXiv:cond-mat/0209584},
  year   = {2008}
}

Comments

5 pages, 6 figures