Related papers: Vertical organic spin valves in perpendicular magn…

We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…

DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…

The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the…

Investigation of the magnetic switching and magnetoresistive behaviour of nanoscale spin valve elements (SVs) of varying physical parameters such as shape, element size, dimensional aspect ratio, and array size is of vital importance for…

Spin valves incorporating perpendicularly magnetized materials are promising structures for memory elements and high-frequency generators. We report the angular dependence of the spin-transfer torque in spin valves with perpendicular…

We present experimental and numerical micromagnetic data on the effect of spin momentum transfer in current perpendicular to the plane spin valves. Starting from a configuration with orthogonal free and pinned layer magnetizations, the free…

Motivated by recent experiments, where the tunnel magnetoresitance (TMR) of a spin valve was measured locally, we theoretically study the distribution of TMR along the surface of magnetized electrodes. We show that, even in the absence of…

Recent experimental measurements of magnetoresistance in dual spin valves [A. Aziz et al., Phys. Rev. Lett. 103, 237203 (2009)] reveal some nonlinear features of transport, which have not been observed in other systems. We propose a…

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…

We theoretically investigate spin-dependent transport in a TMD-based vertical spin valve, taking WSe$_2$ as a representative example. Using effective Hamiltonians for the heterostructure and the Landauer formula, we derive the transmission…

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…

Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin…

We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…

We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable…

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces.…

We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear…

A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin flips on hopping transport by considering the effect of spin dynamics on an…