Related papers: Charge Relaxation in a Single Electron Si/SiGe Dou…
We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we…
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with…
We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and…
DC measurements are made in a superconducting, persistent current qubit structure with a time-ordered meter. The persistent-current qubit has a double-well potential, with the two minima corresponding to magnetization states of opposite…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
We demonstrate a new method of measuring the exciton spin relaxation time in semiconductor nanostructures by continuous-wave photoluminescence. We find that for self-assembled CdTe quantum dots the degree of circular polarization of…
The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed…
We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied…
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…
We use the two fluid model to determine the conditions under which the nuclear spin-lattice lattice relaxation rate, $T_1$, of candidate heavy quantum critical superconductors can exhibit scaling behavior and find that it can occur if and…
We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent…
We present a complementary experimental and theoretical investigation of relaxation dynamics in the charge-density-wave (CDW) system TbTe$_3$ after ultrafast optical excitation. Using time- and angle-resolved photoemission spectroscopy, we…
Nonequilibrium quasiparticle relaxation dynamics is reported in superconducting CaFe1.89Co0.11As2 single crystal using femtosecond time-resolved pump-probe spectroscopy. The carrier dynamics reflects a three-channel decay of laser deposited…
We analyze the relaxation of a superconducting flux qubit during measurement. The qubit state is measured with a nonlinear oscillator driven across the threshold of bifurcation, acting as a switching dispersive detector. This readout scheme…
We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…
Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum…
We investigate theoretically charge-noise induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using…
Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications…
The electronic state around a single vacancy in silicon crystal is investigated by using the Green's function approach. The triply degenerate charge states are found to be widely extended and account for extremely large elastic softening at…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…