Control of spin relaxation in semiconductor double quantum dots
Mesoscale and Nanoscale Physics
2007-05-23 v5 Materials Science
Abstract
We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.
Cite
@article{arxiv.cond-mat/0601028,
title = {Control of spin relaxation in semiconductor double quantum dots},
author = {Y. Y. Wang and M. W. Wu},
journal= {arXiv preprint arXiv:cond-mat/0601028},
year = {2007}
}
Comments
5 pages, 4 figures, to be published in PRB