Related papers: Interband Tunneling in 2D Crystal Semiconductors
Transport through quantum coherent conductors, like atomic junctions, is described by the distribution of conduction channels. Information about the number of channels and their transmission can be extracted from various sources, such as…
Superconducting circuits can behave like atoms making transitions between two levels. Such circuits can test quantum mechanics at macroscopic scales and be used to conduct atomic-physics experiments on a silicon chip.
We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding…
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in…
In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently…
This paper presents results of numerical simulations of electron tunneling through water that extend our previous calculations on such systems in several ways. First, a tip-substrate configuration is used; second, calculations are carried…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
Quantum tunneling allows electrons to be transferred between two regions separated by an energetically forbidden barrier. Performing a position measurement that finds a particle in the barrier forces the tunneling electrons to transition…
High-performance, low-power transistors are core components of advanced integrated circuits, and the ultimate limitation of Moore's law has made the search for new alternative pathways an urgent priority. Two-dimensional (2D) materials have…
The $(kkk)$ double layered quantum Hall state has been shown to exhibit many superfluid properties including the appearance of an alternating tunnelling current in response to an external voltage V. Here we propose the notion of "sideways…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
We adapt the semiclassical technique, as used in the context of instanton transitions in quantum field theory, to the description of tunneling transmissions at finite energies through potential barriers by complex quantum mechanical…
Tunneling of two particles in synchronous and asynchronous regimes is studied in the framework of dissipative quantum tunneling. The critical temperature T_c corresponding to a bifurcation of the underbarrier trajectory is determined. The…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
We have studied the problem of coherent and sequential tunneling through a double barrier structure, assisted by light considered to be present All over the structure, i,e emitter, well and collector as in the experimental evidence. By…
The transport properties of a metal core/semiconductor shell quantum dot molecule (QDM) embedded in a matrix connected to metallic electrodes are theoretically studied in the framework of Keldysh Green function technique. The effects of the…
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…
Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…
Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially…
The persistent current for a one-dimensional ring with two tunnel barriers is considered in the limit of weakly interacting electrons. In addition to a small off-resonance current, there are two kinds of resonant behavior; (i) a current…