Related papers: Interband Tunneling in 2D Crystal Semiconductors
We describe mathematically the apparently paradoxical phenomenon that an electronic current in a semiconductor can flow because of collisions, and not despite them. A transport model of charge transport in a one-dimensional semiconductor…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
Two infinite, two-dimensional, lattice, free fermion systems, initially in different invariant states, are allowed to communicate via two point contacts, through which direct tunneling of fermions takes place. Calculations of the local…
In two dimensional electron systems with Coulomb or dipolar interactions, a direct transition, whether first or second order, from a liquid to a crystalline state is forbidden. As a result, between these phases there must be other…
We investigate cross-correlations in the tunneling currents through two parallel quantum dots coupled to independent electrodes and gates and interacting via an inter-dot Coulomb interaction. The correlations reveal additional information,…
Quantum tunneling between two potential wells in a magnetic field can be strongly increased when the potential barrier varies in the direction perpendicular to the line connecting the two wells and remains constant along this line. An…
We consider tunneling between symmetric wells for a 2-D semi-classical Schr\"odinger operator for energies close to the quadratic minimum of the potential V in two cases: (1) excitations of the lowest frequency in the harmonic oscillator…
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…
We review recent work on resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We derive a general expression for the current flowing in the structure and discuss the…
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…
An exact solution is presented for tunneling through a negative-U d-fold degenerate molecular quantum dot weakly coupled to electrical leads. The tunnel current exhibits hysteresis if the level degeneracy of the negative-U dot is larger…
In present work, we present a couple-channel formalism for the description of tunneling time of a quantum particle through a composite compound with multiple energy levels or a complex structure that can be reduced to a…
We propose a new transport mechanism through tunnel-coupled quantum dots based on the coherent population trapping effect. Coupling to an excited level by the coherent radiation of two microwaves can lead to an extremely narrow current…
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the…
Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…
A quantum interference effect is discussed for subgap tunneling over a distance comparable to the coherence length, which is a consequence of ``advanced-advanced'' and ``retarded-retarded'' transmission modes [Altland and Zirnbauer, Phys.…
We developed the theory of elastic electron tunneling through a potential barrier driven by a strong high-frequency electromagnetic field. It is demonstrated that the driven barrier can be considered as a stationary two-barrier potential…
The tunneling effect of two-dimensional Dirac fermions in a constant magnetic field is studied. This can be done by using the continuity equation at some points to determine the corresponding reflexion and transmission coefficients. For…