Related papers: Graphene transistors for bioelectronics
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…
We investigate the optical properties of edge-functionalized graphene nanosystems, focusing on the formation of junctions and charge transfer excitons. We consider a class of graphene structures which combine the main electronic features of…
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k…
Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential…
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…
Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of…
It is shown that one can explore the optical conductivity of graphene, together with the ability of controlling its electronic density by an applied gate voltage, in order to achieve resonant coupling between an external electromagnetic…
Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an…
Graphene has been known for a long time but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June, 2001 brought to light that graphene could…
Graphene is an interesting debated topic between scientists because of its unique properties such as tunable conductivity. Graphene conductivity can be varied by either electrostatic or magnetostatic gating or via chemical doping, which…
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an…
Among the many interesting features displayed by graphene, one of the most attractive is the simplicity with which its electronic structure can be described. The study of its physical properties is significantly simplified by the linear…
We use spin-density-functional theory (SDFT) ab initio calculations to theoretically explore the possibility of achieving useful gate control over exchange coupling between cobalt clusters placed on a graphene sheet. By applying an electric…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme…
The strong light-matter interaction in graphene over a broad frequency range has opened up a plethora of photonics applications of graphene. The goal of this paper is to present the voltage tunability of plasmons in gated single- and…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…