Related papers: Tunneling through Al/AlOx/Al junction: analytical …
Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real…
Josephson junctions manufactured to tight tolerances are necessary components for superconducting quantum computing. Developing precise manufacturing techniques for Josephson junctions requires an understanding of their make-up and robust…
Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the…
We investigate the transport properties of charge carriers in AB bilayer graphene through a triple electrostatic barrier. We calculate the transmission and reflection using the continuity conditions at the interfaces of the triple barrier…
We report on experiments conducted on single walled carbon nanotube bundles aligned in chains and connected through a natural contact barrier. The dependence upon the temperature of the transport properties is investigated for samples…
In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (001) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated.…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…
The structure and transport properties of SiO2-Al2O3 melts containing 13 mol% and 47 mol% Al2O3 are investigated by means of large scale molecular dynamics computer simulations. The interactions between the atoms are modelled by a pair…
The interface structure of Fe/MgO(100) magnetic tunnel junctions predicted by density functional theory (DFT) depends significantly on the choice of exchange and correlation functional. Bader analysis reveals that structures obtained by…
We demonstrate shadow evaporation-based fabrication of high-quality ultrasmall normal metal -- insulator -- superconductor tunnel junctions where the thickness of the superconducting electrode is not limited by the requirement of small…
We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…
We derive an expression for the 4-point conductance of a general quantum junction in terms of the density response function. Our formulation allows us to show that the 4-point conductance of an interacting electronic system possessing…
The Planar Model of the Electrode-Vacuum-Electrode configuration for STM in which electrode surfaces are assumed to be infinite parallel planes, with atomic size separation and vacuum between them, is used to calculate tunneling current…
Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of potential energy of multiply charged ions impinging on a polycrystalline metal surface. The ion-metal interaction leads to excited…
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence.…
A tight binding model for scanning tunneling microscopy images of a molecule adsorbed on a metal surface is described. The model is similar in spirit to that used to analyze conduction along molecular wires connecting two metal leads and…
We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(111) and CoSi$_2$(111)/Si(111), we consider various possible…
We develop the multi-scale ab-initio scheme for correlated electrons (MACE) for transitionmetal-oxide heterostructures, and determine the parameters of the low-energy effective model. By separating Ti t2g bands near the Fermi level from the…