Ab-initio formulation of the 4-point conductance of interacting electronic systems
Materials Science
2007-10-04 v2 Mesoscale and Nanoscale Physics
Abstract
We derive an expression for the 4-point conductance of a general quantum junction in terms of the density response function. Our formulation allows us to show that the 4-point conductance of an interacting electronic system possessing either a geometrical constriction and/or an opaque barrier becomes identical to the macroscopically measurable 2-point conductance. Within time-dependent density-functional theory the formulation leads to a direct identification of the functional form of the exchange-correlation kernel that is important for the conductance. We demonstrate the practical implementationof our formula for a metal-vacuum-metal interface.
Keywords
Cite
@article{arxiv.0705.1568,
title = {Ab-initio formulation of the 4-point conductance of interacting electronic systems},
author = {P. Bokes and J. Jung and R. W. Godby},
journal= {arXiv preprint arXiv:0705.1568},
year = {2007}
}