Related papers: Quantum resistance standard accuracy close to the …
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
A two-dimensional quantum Hall system is studied for a wide class of potentials including single-body random potentials and repulsive electron-electron interactions. We assume that there exists a non-zero excitation gap above the ground…
Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretical predictions. It is found that the majority of the peak…
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high…
We investigate theoretically the fractional quantum Hall effect at half-filling in the lowest Landau level observed in asymmetric wide quantum wells. The asymmetry can be achieved by a potential bias applied between the two sides of the…
Motivated by two independent experiments revealing a resistance minimum at the Landau level (LL) filling factor $\nu=2+4/9$, characteristic of the fractional quantum Hall effect (FQHE) and suggesting electron condensation into a yet unknown…
We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy…
We study the critical properties of the quantum anomalous Hall (QAH) plateau transition in magnetic topological insulators. We introduce a microscopic model for the plateau transition in QAH effect at the coercive field and then map it to…
The nature of the fractional quantum Hall effect at $\nu=1/2$ observed in wide quantum wells almost three decades ago is still under debate. Previous studies have investigated it by the variational Monte Carlo method, which makes the…
We construct an effective Hamiltonian for electrons in the fractional quantum Hall regime for GaAs and graphene that takes into account Landau level mixing (for both GaAs and graphene) and subband mixing (for GaAs, due to the nonzero width…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We have measured the temperature dependence of the conductivity $\sigma_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hopping theory we are able to…
We have observed quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy.…
The quantum Hall plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with \kappa=0.42 was observed from 1.2K down to 12mK. This…
We present a microscopic theory for the recently observed reentrant integral quantum Hall effect in the n=1 and n=2 Landau levels. Our energy investigations indicate an alternating sequence of M-electron-bubble and quantum-liquid ground…
We investigate the scaling properties of zero temperature conductances at integer quantum Hall plateau transitions in the lowest Landau band of a two-dimensional tight-binding model. Scaling is obeyed for all energy and system sizes with…
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the…
Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator…
We present observations of an anisotropic resistance state at Landau level filling factor $\nu=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field…