Related papers: Quantum resistance standard accuracy close to the …
Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
In view of the progress achieved in the field of the ac quantum Hall effect, the Working Group of the Comite Consultatif d'Electricite et Magnetisme (CCEM) on the AC Quantum Hall Effect asked the authors of this paper to write a compendium…
Quantum Hall (QH) states are predicted to display an intriguing non-dissipative stress response to a shear deformation rate, a phenomenon variously known as asymmetric or Hall viscosity, or Lorentz shear response. Just as the QH effect…
We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $\nu=2$ and the $\nu=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall…
Experimental studies of the transitions from a primary quantum Hall (QH) liquid at filling factor 1/k (with k an odd integer) to the insulator have indicated a ``quantized Hall insulator'' (QHI) behavior: while the longitudinal resistivity…
We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance \rho_{xx} follow an exponential law and we extract a critical…
Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed $dissipationless$ in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination…
We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a…
Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples [Villegas Rosales {\it et al.}, Phys. Rev. Lett. {\bf 127}, 056801 (2021)] open the…
It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs…
Energy spectrum of fractional quantum Hall (FQH) states is composed of single electron energy (Landau energy) neglecting the Coulomb interactions between electrons, classical Coulomb energy and the quantum energy via quantum transitions.…
We derive the trial Hall resistance formula for the quantum Hall metals to address both the integer and fractional quantum Hall effects. Within the degenerate Landau levels, Zeeman splitting and level crossings in the presence of changing…
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and…
We generalize the fractional quantum Hall hierarchy picture to apply to arbitrary, possibly non-Abelian, fractional quantum Hall states. Applying this to the nu = 5/2 Moore-Read state, we construct new explicit trial wavefunctions to…
We constructed a Hall resistance formula for the fractional quantum Hall effect by analyzing the experimental data reported in [J. P. Eisenstein and H. L. Stormer, {Science} {\bf 248}, 1510 (1990)]. The formula is given as a function of…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…
We present a direct numerical evidence for reflection symmetry of longitudinal resistivity $\rho_{xx}$ and quantized Hall resistivity $\rho_{xy}$ near the transition between $\nu=1$ quantum Hall state and insulator, in accord with the…