We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance \rho_{xx} follow an exponential law and we extract a critical exponent \kappa= .55 \pm .05 which is slightly different from the established value \kappa = .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance \sigma_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.
@article{arxiv.cond-mat/9812035,
title = {Probing the plateau-insulator quantum phase transition in the quantum Hall regime},
author = {R. T. F. van Schaijk and A. de Visser and S. Olsthoorn and H. P. Wei and A. M. M. Pruisken},
journal= {arXiv preprint arXiv:cond-mat/9812035},
year = {2009}
}