We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor ν=4 on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the ν=4 quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.
@article{arxiv.cond-mat/0503306,
title = {On the low-field insulator-quantum Hall conductor transitions},
author = {Tsai-Yu Huang and J. R. Juang and C. F. Huang and Gil-Ho Kim and Chao-Ping Huang and C. -T. Liang and Y. H. Chang and Y. F. Chen and Y. Lee and D. A. Ritchie},
journal= {arXiv preprint arXiv:cond-mat/0503306},
year = {2009}
}
Comments
Our experimental results are inconsistent with Huckestein's argument [PRL 84, 3141 (2000)]