We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance \rho_xy which remains quantized at the plateau value h/e^2 throughout the PI transition. We extract a critical exponent \kappa'= 0.57 +/- 0.02 for the PI transition which is slightly different from (and possibly more accurate than) the established value 0.42 +/- 0.04 as previously obtained from the plateau-plateau (PP) transitions.
@article{arxiv.cond-mat/0106375,
title = {Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure},
author = {D. T. N. de Lang and L. A. Ponomarenko and A. de Visser and C. Possanzini and S. M. Olsthoorn and A. M. M. Pruisken},
journal= {arXiv preprint arXiv:cond-mat/0106375},
year = {2009}
}
Comments
3pages, 2 figures; submitted to EP2DS-14 conference proceedings