Related papers: Valley-dependent 2D transport in Si-MOSFETs
Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…
A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau,…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
We present an electrical transport study of the 2-dimensional (2D) organic conductor tau-(P-(S,S)-DMEDT-TTF)_2(AuBr)_2(AuBr_2)_y (y = 0.75) at low temperatures and high magnetic fields. The inter-plane resistivity rho_zz increases with…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
The 2D lattice gas model with competing short and long range interactions is appliedused for calculation of the incoherent charge transport in the classical strongly-correlated charge segregated polaronic state. We show, by means of…
We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
We calculate the valley degeneracy ($g_v$) dependence of the many-body renormalization of quasiparticle properties in multivalley 2D semiconductor structures due to the Coulomb interaction between the carriers. Quite unexpectedly, the $g_v$…
In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
Screening of an external random potential by a two dimensional (2D) Fermi liquid may be strongly dependent on the degree of its polarization. This is considered as a possible mechanism for the observed strong magnetoresistance of the 2D…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was…
In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low…
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or…