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Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as…

Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk…

Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ…

Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered…

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser…

Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a…

Materials Science · Physics 2017-11-15 Steven R. Spurgeon , Peter V. Sushko , Ryan B. Comes , Scott A. Chambers

Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One…

Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of…

Materials Science · Physics 2018-02-14 Minhui Hu , Qinghua Zhang , Lin Gu , Qinlin Guo , Yanwei Cao , M. Kareev , J. Chakhalian , Jiandong Guo

The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A…

Performing an analysis within density functional theory, we develop insight into the structural and electronic properties of the oxide heterostructure LaAlO3/SrTiO3. Electrostatic surface effects are decomposed from the internal lattice…

Materials Science · Physics 2015-05-13 U. Schwingenschloegl , C. Schuster

The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10-3 mbar or 10-5 mbar, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our…

Materials Science · Physics 2014-10-10 Jihwey Park , Yeong-Ah Soh , Gabriel Aeppli , Adrian David , Weinan Lin , Tom Wu

Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory…

Strongly Correlated Electrons · Physics 2017-10-13 A. Ron , A. Hevroni , E. Maniv , M. Mograbi , L. Jin , C. -L. Jia , K. W. Urban , G. Markovich , Y. Dagan

We report on the fabrication of conducting interfaces between LaAlO$_3$ and SrTiO$_3$ by 90$^o$ off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of…

Materials Science · Physics 2018-11-05 Chunhai Yin , Dileep Krishnan , Nicolas Gauquelin , Jo Verbeeck , Jan Aarts

We report on surface effects on the electronic properties of interfaces in epitaxial LaAlO$_3$/SrTiO$_3$ heterostructures. Our results are based on first-principles electronic structure calculations for well-relaxed multilayer…

Materials Science · Physics 2009-11-13 U. Schwingenschloegl , C. Schuster

Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronics applications. Here, based on first-principles calculations, we propose a novel surface La interstitial…

Materials Science · Physics 2017-12-06 Jun Zhou , Ming Yang , Yuan Ping Feng , Andrivo Rusydi

The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp…

Twisted oxide membranes represent a promising platform for exploring moire physics and emergent quantum phenomena. However, the presence of amorphous interfacial dead layers in conventional oxide heterostructures impedes coherent coupling…

Materials Science · Physics 2026-01-30 Young-Hoon Kim , Reza Ghanbari , Min-Hyoung Jung , Young-Min Kim , Ruijuan Xu , Miaofang Chi

Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It…

Materials Science · Physics 2013-05-29 Alexey S. Kalabukhov , Robert Gunnarsson , Johan Borjesson , Eva Olsson , Tord Claeson , Dag Winkler

The interface of complex oxide heterostructures sets the stage for various electronic and magnetic phenomena. Many of these collective effects originate from the precise structural arrangement at the interface that in turn governs local…

Mesoscale and Nanoscale Physics · Physics 2021-03-17 Max Burian , Bill Francesco Pedrini , Nazaret Ortiz Hernandez , Hiroki Ueda , C. A. F. Vaz , Milan Radovic , Urs Staub

We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high…

Materials Science · Physics 2009-11-13 Hanghui Chen , Alexie M. Kolpak , Sohrab Ismail-Beigi
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