Related papers: Magnetic field sensor with voltage-tunable sensing…
A topological modulation of magnetic thin films can induce a magnetic anisotropy of magnetostatic origin. In this letter, we report on the magnetic properties of NiFe layers deposited on wavy shaped Si substrates. Without any modulation,…
A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface…
We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co…
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
By tuning superconductivity with an applied magnetic field, we use neutrons to compare the magnetic ordered phases in superconducting and normal states of CeCo$_{0.5}$Rh$_{0.5}$In$_{5}$. At zero field, CeCo$_{0.5}$Rh$_{0.5}$In$_{5}$…
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy…
The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel…
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we…
Magnetoresistance loops under in-plane applied field were measured on perpendicularly magnetized magnetic tunnel junction (pMTJ) pillars with nominal diameters ranging from 50 to 150 nm. By fitting the hard-axis magnetoresistance loops to…
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large…
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a…
Dynamic modulation of electromagnetic responses is theoretically examined in dielectric antiferromagnets. While both magneto-electric and magneto-elastic coupling can achieve robust electrical control of magnetic anisotropy, the latter is…
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power…
In this work, we study experimentally by broadband ferromagnetic resonance measurements, the dependence of the spin-wave excitation spectra on the magnetic applied field in CoFeB meander-shaped films. Two different orientations of the…
The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…