Related papers: Magnetic field sensor with voltage-tunable sensing…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
An initially isotropic medium, when subjected to either a magnetic field or a coherent field, can induce anisotropy in the medium and can cause the polarization of a probe field to rotate. Therefore the rotation of probe polarization, due…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…
Identifying and characterizing new magnetic systems with Co2+ ions can enhance our understanding of quantum behavior since Co2+ can host a pseudospin-1/2 magnetic ground state. Understanding the magnetic ground state and the phase diagrams…
Transition metal dichalcogenides (TMD) possess novel properties which makes them potential candidates for various spintronic applications. Heterostructures of TMD with magnetic thin film have been extensively considered for spin-orbital…
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the…
We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied…
Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which…
Phonon properties and the lattice thermal conductivity are not generally understood to be sensitive to magnetic fields. Using an applied field to change MnBi2Te4 between antiferromagnetic (AFM), canted (CAFM) and ferromagnetic (FM) phases…
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…
By considering gauge transformations on the macroscopic Maxwell's equations, a two dimensional gauge field, with its pseudo magnetic field in the real space, is identified as tilted anisotropy in the constitutive parameters. We show that…
Electric Hall effects generated by an in-plane magnetic field have recently gained attention owing to their intrinsic origin in topological electronic states and potential application in magnetic field sensing. In pratice, the measured…
We reversibly switch the polar environment of an individual magnetic atom with an electric field to control the energy barrier for reversal of magnetization. By applying an electric field in the gap between the tip and sample of a scanning…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral…
Controlling the uniaxial magnetic anisotropy is of practical interest to a wide variety of applications. We study Co$_{40}$Fe$_{40}$B$_{20}$ single films grown on various crystalline orientations of LiNbO$_3$ substrates and on oxidized…
We report first-principles analysis on the bias dependence of spin-transfer torque (STT) in Fe/MgO/Fe magnetic tunnel junctions. The in-plane STT changes from linear to nonlinear dependence as the bias voltage is increased from zero. The…
We examine the interplay between anisotropy of the in-plane magnetization and the nodal gap structure on the basis of the approximate analytic solution in the quasiclassical formalism. We show that a four-fold oscillation appears in the…
Voltage control of magnetism via magneto-ionics, where ion transport and/or redox processes drive magnetic modulation, holds great promise for next-generation memories and computing. This stems from its non-volatility and ability to…
Control of magnetization and electric polarization is attractive in relation to tailoring materials for data storage and devices such as sensors or antennae. In magnetoelectric materials, these degrees of freedom are closely coupled,…