Related papers: Magnetic field sensor with voltage-tunable sensing…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
Interest in planar Hall effect (PHE) sensors has re-emerged in recent years due to their promising potential for a wide range of applications, particularly in biotechnology. Sensor sensitivity can be enhanced by lowering the effective…
This study investigates a vortex sensor based on a nanoscale (sub-100 nm) magnetic tunnel junction (MTJ) with a strong shape anisotropy, designed for sensitivity to the out-of-plane magnetic field component ($H_z$). The sensor comprises a…
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth…
In a collinear antiferromagnet, spins tend to cant towards the direction of an applied magnetic field, thereby decreasing the energy of the system. The canting angle becomes negligible when the magnetic field is small so that the induced…
A two-core transducer assembly using a Fe73.5Nb3Cu1Si13.5B9 ribbon to detect a change of magnetic field is proposed and tested for displacement (linear and angular) and current sensor. Two identical inductors, with the ribbon as core, are a…
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB…
Understanding the magnetic field sensitivity of Transition Edge Sensors (TESs) is vital in optimising the configuration of any magnetic shielding as well as the design of the TESs themselves. An experimental system has been developed to…
We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ with CoFe$_{2}$O$_{4}$ where the TMR versus applied magnetic field loop suggests a "negative coercive field". Tracing its…
We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
Recent measurements of the magnetoimpedance (at a fixed frequency of 1 MHz) of cobalt-rich wires subjected to torsion stress show an asymmetry as a function of torsion angle stemming from residual anisotropies induced during wire…
Inertial sensors that measure the acceleration of ultracold atoms promise unrivalled accuracy compared to classical equivalents. However, atomic systems are sensitive to various perturbations, including magnetic fields, which can introduce…
We demonstrate a versatile variable field module (VFM) with capability of both field and angular dependent measurements up to 1800 Oe for scanning probe system. The magnetic field strength is changed by adjusting the distance between a rare…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically-driven spintronics. Currently, magnetotransport investigations on these materials are…
We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K),…
We demonstrate that magnetic properties of ultra-thin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally-oxidized state with a strong perpendicular…