Related papers: Numerical simulation of organic semiconductor devi…
The charge carrier drift mobility in disordered semiconductors is commonly graphically extracted from time-of-flight (ToF) photocurrent transients yielding a single transit time. However, the term transit time is ambiguously defined and…
We consider the discretization of a semilinear damped wave equation arising, for instance, in the modeling of gas transport in pipeline networks. For time invariant boundary data, the solutions of the problem are shown to converge…
This paper is devoted to the investigation of inverse problems related to stationary drift-diffusion equations modeling semiconductor devices. In this context we analyze several identification problems corresponding to different types of…
We consider the problem of electron transport across a quasi-one-dimensional disordered multiply-scattering medium, and study the statistical properties of the electron density inside the system. In the physical setup that we contemplate,…
An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly…
We apply optimum experimental design (OED) to organic semiconductors modeled by the extended Gaussian disorder model (EGDM) which was developed by Pasveer et al. We present an extended Gummel method to decouple the corresponding system of…
A finite element discretization using a method of lines approached is proposed for approximately solving the Poisson-Nernst-Planck (PNP) equations. This discretization scheme enforces positivity of the computed solutions, corresponding to…
The peculiarities of electric current in semiconductors with nonuniform distribution of charge carriers are studied. The semiclassical drift-diffusion equations consisting of the continuity equations and the Poisson equation are solved…
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo…
The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the…
At low values of external doping graphene displays a wealth of unconventional transport properties. Perhaps most strikingly, it supports a robust 'metallic' regime, with universal conductance of the order of the conductance quantum. We here…
We present a scalable iterative solver for high-order hybridized discontinuous Galerkin (HDG) discretizations of linear partial differential equations. It is an interplay between domain decomposition methods and HDG discretizations, and…
Consider the random sequential packing model with infinite input and in any dimension. When the input consists of non-zero volume convex solids we show that the total number of solids accepted over cubes of volume $\lambda$ is…
This article performs a unified convergence analysis of a variety of numerical methods for a model of the miscible displacement of one incompressible fluid by another through a porous medium. The unified analysis is enabled through the…
We develop a systematic perturbative method to obtain analytic solution of the Generalized Dorokhov-Mello-Pereyra-Kumar (DMPK) equation in the strongly disordered regime which describes the evolution of the joint probability distribution of…
The numerical solution of time-dependent radiative transfer problems is challenging, both, due to the high dimension as well as the anisotropic structure of the underlying integro-partial differential equation. In this paper we propose a…
We present and analyze a discontinuous Galerkin method for the numerical modeling of the non-linear fully-coupled thermo-hydro-mechanic problem. We propose a high-order symmetric weighted interior penalty scheme that supports general…
Experiments often show that the photoconductance $\sigma$ of a semiconductor system and the light intensity $I$ are related by $\sigma\sim I^\gamma$. Conventional theories give a satisfactory explanation for $\gamma=1$ or $\gamma=1/2$, but…
Numerical simulations of cardiovascular mass transport pose significant challenges due to the wide range of P\'eclet numbers and backflow at Neumann boundaries. In this paper we present and discuss several numerical tools to address these…
For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean…