On inverse problems for semiconductor equations
Analysis of PDEs
2020-11-24 v1 Numerical Analysis
Numerical Analysis
Abstract
This paper is devoted to the investigation of inverse problems related to stationary drift-diffusion equations modeling semiconductor devices. In this context we analyze several identification problems corresponding to different types of measurements, where the parameter to be reconstructed is an inhomogeneity in the PDE model (doping profile). For a particular type of measurement (related to the voltage-current map) we consider special cases of drift-diffusion equations, where the inverse problems reduces to a classical inverse conductivity problem. A numerical experiment is presented for one of these special situations (linearized unipolar case).
Cite
@article{arxiv.2011.11370,
title = {On inverse problems for semiconductor equations},
author = {M. Burger and H. W. Engl and A. Leitão and P. A. Markowich},
journal= {arXiv preprint arXiv:2011.11370},
year = {2020}
}
Comments
37 pages, 7 figures