Semiconductors and Dirichlet-to-Neumann maps
Analysis of PDEs
2021-01-25 v1 Numerical Analysis
Numerical Analysis
Abstract
We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data.
Cite
@article{arxiv.2101.09248,
title = {Semiconductors and Dirichlet-to-Neumann maps},
author = {A. Leitao},
journal= {arXiv preprint arXiv:2101.09248},
year = {2021}
}
Comments
13 pages, 2 figures