Inverse problems for semiconductors: models and methods
Numerical Analysis
2021-01-23 v1 Computational Engineering, Finance, and Science
Numerical Analysis
Abstract
We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.
Cite
@article{arxiv.2011.12800,
title = {Inverse problems for semiconductors: models and methods},
author = {A. Leitao and P. A. Markowich and J. P. Zubelli},
journal= {arXiv preprint arXiv:2011.12800},
year = {2021}
}
Comments
33 pages, 6 figures. arXiv admin note: text overlap with arXiv:2011.11370