External noise effects on the electron velocity fluctuations in semiconductors
Materials Science
2008-10-07 v1
Abstract
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.
Keywords
Cite
@article{arxiv.0810.0995,
title = {External noise effects on the electron velocity fluctuations in semiconductors},
author = {D. Persano Adorno and N. Pizzolato and B. Spagnolo},
journal= {arXiv preprint arXiv:0810.0995},
year = {2008}
}
Comments
4 pages, 2 figures, presented at 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius 2007