Related papers: Gold assisted molecular beam epitaxy of Ge nanostr…
Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale…
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation…
The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying…
The present study reports on the structure formation in thin epitaxial nickel-aluminum films (Ni1-xAlx; Al atomic fraction x up to x=0.24) grown on MgO(001) substrates by magnetron sputtering. Experimental and computational data demonstrate…
Bio-conjugated nanomaterials play a promising role in the development of novel supramolecular structures, molecular machines, and biosensing devices. In this study, lipid-conjugated gold nanoparticles were synthesized and allowed to form a…
I propose to use laser heating both for the substrate and the thermal evaporation sources in a vacuum chamber operating at pressures from XHV to values where the mean free path of the particles approaches or slightly exceeds the…
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings…
This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an…
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass…
In the process of molecular dynamics simulation studies of gold nanowires an interesting structure is discovered. This is a finite double-wall nanowire with a large empty core similar to single-wall and double-wall carbon nanotubes. The…
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which…
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the…
Here we show results of first-principles investigations aiming at tuning and controlling the catalytic activity of gold nanoclusters through the design of the underlying support. We show that gold clusters adsorbed on a very thin (2 layers)…
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and…
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this…
We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…