Related papers: Charged Impurity Scattering in Graphene Nanostruct…
Graphene supported on a substrate in contact with water underpins a wide range of processes and technologies, yet its wettability remains controversial. Understanding how substrate charges and graphene's properties influence water…
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
The distribution of net electric charge in graphene is investigated, using both a constitutive atomic charge-dipole interaction model and an approximate analytical solution to Laplace's equation. We demonstrate a strong size dependence of…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…
Relativistic quantum theory of induced scattering of 2D Dirac particles by electrostatic field of impurity ion (in the Born approximation) in the doped graphene at the presence of an external electromagnetic radiation field (actually…
We study transport properties of graphene nanostructures consisted of alternating slabs of gapless and gapped graphene in the presence of piecewise constant external potential equal to zero in the gapless regions. The transmission through…
The main goal of our study was investigation of the influence of the deformations (sufficiently large for the establishing the non-zero gap) on electrotransport properties of impure graphene. To achieve this purpose, we implemented the…
The zero gap surface states of a 3D-topological insulator host highly mobile Dirac fermions with spin locked to the momentum. The high mobility attributed to absence of back scattering is reduced in presence of impurities on the surface. In…
Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging…
Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the…
The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…
It is pointed out that point defects on graphene are strongly correlated and can not be treated as independent scatters. In particular, for large on-site defect potential, it is shown that defects induce an impurity band with density of…
Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical…
We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless…
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed…
We consider the nonlinear terahertz response of n-doped monolayer graphene at room temperature using a microscopic theory of carrier dynamics. Our tight-binding model treats the carrier-field interaction in the length gauge, includes phonon…
Leveraging topological properties in the response of electromagnetic systems can greatly enhance their potential. Although the investigation of singularity-based electromagnetics and non-Hermitian electronics has considerably increased in…
Scattering by a single impurity introduced in a strongly correlated electronic system is studied by exact diagonalization of small clusters. It is shown that an inert site which is spinless and unable to accomodate holes can give rise to…
The electronic properties of low-dimensional materials can be engineered by doping, but in the case of graphene nanoribbons (GNR) the proximity of two symmetry-breaking edges introduces an additional dependence on the location of an…