The zero gap surface states of a 3D-topological insulator host highly mobile Dirac fermions with spin locked to the momentum. The high mobility attributed to absence of back scattering is reduced in presence of impurities on the surface. In particular, we discuss and compare scattering times for localized impurities on the surface, scattering between states of opposite helicity located on different surfaces coupled through a hybridization potential, and the role of magnetic impurities. Magnetic impurities give rise to an additional spin suppression factor. The role of warped bands and its influence on topological factors that can enhance the overall surface mobility is examined.
@article{arxiv.1505.05070,
title = {Scattering times and mobility with localized impurities in topological insulator films},
author = {Parijat Sengupta and Enrico Bellotti},
journal= {arXiv preprint arXiv:1505.05070},
year = {2015}
}