Related papers: Charged Impurity Scattering in Graphene Nanostruct…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…
The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional…
We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…
We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness,…
By using Fourier-transform scanning tunneling spectroscopy we measure the interference patterns produced by the impurity scattering of confined Dirac quasiparticles in epitaxial graphene nanoflakes. Upon comparison of the experimental…
We evaluate the autocorrelation function of the electrostatic potential in doped graphene due to nearby charged impurities. The screening of those impurities is described by a combination of the polarization function for graphene in random…
Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…
An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, $\rho_{ab}$, in graphite above room temperature. Contrary to this…
Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene…
The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…
We systematically calculate thermopower of biased and unbiased multilayer grphene systems. The effect of screening to a bias field perpendicular to the graphene planes is taken into account self-consistently under the Hartree approximation.…
Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impurity models, we study in detail the disorder induced…
We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-B\"uttiker formalism within the tight-binding approximation. Calculations reveal a…
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…
We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of…
The experimental availability of ultra-high-mobility samples of graphene opens the possibility to realize and study experimentally the "hydrodynamic" regime of the electron liquid. In this regime the rate of electron-electron collisions is…
Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate…
The in-plane static screening of the field originated by a charge placed in a graphene sheet is investigated. A self-consistent field equation in the real space domain is obtained by using a suitable Thomas-Fermi procedure. Exact and…
The aim of this work is to simulate the charge transport in a monolayer graphene on different substrates. This requires the inclusion of the scatterings of the charge carriers with the impurities and the phonons of the substrate, besides…