English

Impurity band induced by point defects in graphene

Strongly Correlated Electrons 2015-05-13 v1

Abstract

It is pointed out that point defects on graphene are strongly correlated and can not be treated as independent scatters. In particular, for large on-site defect potential, it is shown that defects induce an impurity band with density of state characterized by the Wigner semi-circle law. We find that the impurity band enhances conductivity to the order of 4e2/h4 e^2 /h and explains the absence of strong localization. Furthermore,the impurity band supports ferromagnetism with the induced magnetic moment approaching 1μB\mu_B per defect in the limit of infinite quasi-particle lifetime.

Keywords

Cite

@article{arxiv.0905.0251,
  title  = {Impurity band induced by point defects in graphene},
  author = {Bor-Luen Huang and Chung-Yu Mou},
  journal= {arXiv preprint arXiv:0905.0251},
  year   = {2015}
}

Comments

4, pages, 2 figures

R2 v1 2026-06-21T12:57:39.780Z