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The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfOx redox-based…
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…
Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic…
A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors; however coherent understanding of…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…
Films produced by assembling bare gold clusters well beyond the electrical percolation threshold show a resistive switching behavior whose investigation has started only recently. Here we address the challenge to charaterize the resistance…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the…
We study the temperature dependence of the superconductor-insulator transition in granular superconductors. Empirically, these systems are characterized by very broad resistance tails, which depend exponentially on the temperature, and the…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…