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The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…
A double percolation transition is identified in a binary network composed of nanoparticles of magnesium diborade superconductor and chromium oxide half-metallic ferromagnet. Anomalously high-resistance or insulating state, as compared to…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited…
A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of…
The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…
Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…
Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…