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Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
The state of a 2-D random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current $I$ is below…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high…
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…
In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…
Modular architectures are a promising route toward scalable superconducting quantum processors, but finite fabrication yield and the lack of high quality temporary interconnects impose fundamental limitations on system size. Here, we…
Using the extensively studied V2O3 as a prototype system, we investigate the role of percolation in metal-insulator transition (MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and…
A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
Scaling theory, duality symmetry, and numerical simulations of a random network model are used to study the magnetoresistance of a metal/insulator/perfect conductor composite with a disordered columnar microstructure. The phase diagram is…
We study the percolation in coupled networks with both inner-dependency and inter-dependency links, where the inner- and inter-dependency links represent the dependencies between nodes in the same or different networks, respectively. We…
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…
Recent experiments on temporal reflection in transmission line metamaterials and theoretical treatments of dispersive time-varying media have unearthed the fundamental role of modulation mechanisms on the interface conditions, underpinning…
The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…
The phase transition behavior and charge storage mechanism of Pr$_2$MgZrO$_6$ (PMM), an oxygen-intercalated pseudocapacitor, were investigated through crystal structure analysis, Raman spectroscopy, ac conductivity spectroscopy, X ray…
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled)…
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response…
We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing…