Related papers: Epitaxial graphene morphologies probed by weak (an…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…
We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder at half filling. We show that the transport properties of the system depend strongly on the symmetry of disorder. We find that…
We study a weakly disordered 2D electron gas with two bands and a spectral node within the weak-localization approach and compare its results with those of Gaussian fluctuations around the self-consistent Born approximation. The appearance…
An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…
A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo)…
Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational…
We study the effect of a sharply localized magnetic field on the electron transport in a strip (ribbon) of graphene sheet, which allows to give results for the transmission and reflection probability through magnetic barriers. The magnetic…
We investigate the fine structure of graphene on iridium, which is a model for graphene weakly interacting with a transition metal substrate. Even the highest quality epitaxial graphene displays tiny imperfections, i.e. small biaxial…
The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a…
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder…
The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we…
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi…
Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy…
We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the…
It has been shown recently that in spin precession experiments, the interaction of spins with localized states can change the response to a magnetic field, leading to a modified, effective spin relaxation time and precession frequency.…
We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with…
Epitaxial graphene grown on metallic substrates presents, in several cases, a long-range periodic structure due to a lattice mismatch between the graphene and the substrate. For instance, graphene grown on Ir(111), displays a corrugated…
We have studied the incommensurate moir\'e structure of epitaxial graphene grown on iridium(111) by dynamic low energy electron diffraction [LEED-I(V)] and non-contact atomic force microscopy (AFM) with a CO terminated tip. Our LEED-I(V)…
Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…