Related papers: Epitaxial graphene morphologies probed by weak (an…
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the…
We present a study of the wrinkling modes, localized in the plane of single- and few-layer graphene sheets embedded in or placed on a compliant compressively strained matrix. We provide the analytical model based on nonlinear elasticity of…
We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their…
Localization properties of the doped Z_2-topological insulator are studied by weak localization theory. The disordered Kane-Mele model for graphene is taken as a prototype, and analyzed with attention to effects of the topological mass…
A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed.…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and…
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was…
We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…
We calculate the interference correction to the conductivity of doped transition metal dichalcogenide (TMDC) monolayers. Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a…
The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard…
Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the…
Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of…
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to…
Monolayer epitaxial graphene is an appropriate candidate for a wide variety of electronic and optical applications. One advantage of growing graphene on the Si face of SiC is that it develops as a single crystal, as does the layer…
Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene is known to be susceptible to quantum interference corrections of the conductivity,…
We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in…
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force…
We have experimentally investigated quantum interference corrections to the conductivity of graphene nanoribbons at temperatures down to 20 mK studying both weak localization (WL) and universal conductance fluctuations (UCF). Since in…