Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC
Plasma Physics
2010-10-29 v2
Abstract
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses.
Keywords
Cite
@article{arxiv.1010.4080,
title = {Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC},
author = {B. K. Daas and K. M. Daniels and T. S. Sudarshan and M. V. S. Chandrashekhar},
journal= {arXiv preprint arXiv:1010.4080},
year = {2010}
}
Comments
11 pages and 10 figures. Submitted to Nano-Letters