Related papers: Drop-coated Titanium Dioxide Memristors
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…
Semiconductor detector fabrication technologies developed decades ago are widely employed today to produce gamma-ray detectors from large volume, single crystals of high purity Ge (HPGe). Most all of these detectors are used exclusively for…
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual…
The process of creating an atomically defined and robust metallic tip is described and quantified using measurements of contact conductance between gold electrodes and numerical simulations. Our experiments show how the same conductance…
This paper presents fabrication, measurement and modelling results for a metal-dielectric-metal metasurface absorber for solar thermal applications. The structure uses amorphous carbon as an inter-layer between thin gold films with the…
Deep eutectic solvents with admixed lithium salts are considered as electrolytes in electrochemical devices like batteries or supercapacitors. Compared to eutectic mixtures of hydrogen-bond donors and lithium salts, their raw-material costs…
Pure metals (Cu, Ti, Zr, V, Pd) and diluted Pd-alloys (Pd-Ag, Pd-Pt, Pd-Ru, Pd-Rh) were implanted by 25 keV deuterium ions at fluences in the range (1.2{\div}2.3)x1022 D+/m2. The post-treatment depth distributions of deuterium ions were…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by…
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity of 2D insulators in the thickness control provides an ideal…
We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid…
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…
This study presents the development and the characterization of novel white reflective filaments suitable for additive manufacturing of finely segmented plastic scintillators. The filament is based on polycarbonate (PC) and polymethyl…
The formation of conducting channels of Ti${}_4$O${}_7$ inside TiO${}_2$-based memristors is believed to be the origin for the change in electric resistivity of these devices. While the properties of the bulk materials are reasonably known,…
The drift tube ion mobility spectrometry (DTIMS) is a device used to detect trace chemicals, and its miniaturized design is always desired in practice engineering. In previous studies, little attention has been paid to the reaction region…
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly…
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging…
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked…
The rapid degradation of the functional properties of many Ti-based alloys is due to the precipitation of the $\omega$ phase. In the conventional high-temperature shape memory alloy Ti-Ta the formation of this phase compromises completely…