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The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
A method is presented to calculate the spin relaxation times T1, T2 due to a non-uniform magnetic field, and the linear-in-electric-field precession frequency shift {\delta}{\omega}E when an electric field is present, in the diffusion…
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by…
We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden…
The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A…
The energy levels of two interacting electrons in a 2D quantum dot confined by a finite Gaussian potential and subjected to a uniform magnetic field perpendicular to the plane of the dot are studied. Analytic results are obtained for the…
The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the…
We study two-electron states confined in two coupled quantum dots formed by a short-range potential in a two-dimensional topological insulator. It is shown that there is a fairly wide range of the system parameters, where the ground state…
We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order…
We propose and implement a non-destructive measurement that distinguishes between two-electron spin states in a quantum dot. In contrast to earlier experiments with quantum dots, the spins are left behind in the state corresponding to the…
We simulate the control of the spin states in a two-electron double quantum dot when an external detuning potential is used for passing the system through an anticrossing. The hyperfine coupling of the electron spins with the surrounding…
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
The unique combination of outstanding optical quality and attractive spin properties opens new avenues for optical spin control in hybrid organic-inorganic perovskite semiconductors. Using the optically detected magnetic resonance…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
The nuclear spin relaxation rate (1/$T_1$) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probing the nuclear spins. A "tilted plateau" feature is observed…
We observe a strong dependence of the exciton spin relaxation in CdTe quantum dots on the average dot size and the depth of the confining potential. For the excitons confined to the as-grown CdTe quantum dots we find the spin relaxation…
Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time…
We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…