Related papers: Electron Number Dependence of Spin Triplet-Singlet…
We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin…
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of…
The performance of multi-electron spin qubits is examined by comparing exchange oscillations in coupled single-electron and multi-electron quantum dots in the same device. Fast (> 1 GHz) exchange oscillations with a quality factor Q > 15…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
Electron spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3$\sim$1 monolayer) embeded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin relaxation…
Electron relaxation in quantum dots is studied theoretically in polar semiconductor materials, with an emphasis put on the phonon-bottleneck problem and electron-LO-phonon coupling. The theory is based on multiphonon states of the…
We study a system in which electrons in a two-dimensional electron gas are confined by a nonhomogeneous nuclear spin polarization. The system consists of a heterostructure that has non-zero nuclei spins. We show that in this system…
We propose a scheme for electrical measurement of two-electron spin states in a semiconductor double quantum dot. We calculated the adiabatic charge transfer when surface gates are modulated in time. Because of spin-orbit coupling in the…
We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet…
Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and…
Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in…
In double quantum dots, the exchange interaction between two electron spins renormalizes the excitation energy of pair-flips in the nuclear spin bath, which in turn modifies the non-Markovian bath dynamics. As the energy renormalization…
Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval…
Results of calculations and high source-drain transport measurements are presented which demonstrate voltage-tunable entanglement of electron pairs in lateral quantum dots. At a fixed magnetic field, the application of a judiciously-chosen…
Scaling up qubits is a necessary step to realize useful systems of quantum computation. Here we demonstrate coherent manipulations of four individual electron spins using a micro-magnet method in a quadruple quantum dot - the largest number…
We study the decoherence of a single electron spin in an isolated quantum dot induced by hyperfine interaction with nuclei for times smaller than the nuclear spin relaxation time. The decay is caused by the spatial variation of the electron…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the…
The spectral properties of up to four interacting electrons confined within a quasi one--dimensional system of finite length are determined by numerical diagonalization including the spin degree of freedom. The ground state energy is…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…