Related papers: Multiscaling analysis of ferroelectric domain wall…
Understanding the dynamic behavior of the domain structure is critical to the design and application of super-elastic freestanding ferroelectric thin films. The phase-field simulation is currently a powerful tool for observing, exploring,…
Motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain wall motion through the ferroelectric material is however hindered by pinning on…
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical…
As a consequence of elasticity, mechanical deformations of crystals occur on a length scale comparable to their thickness. This is exemplified by applying a homogeneous electric field to a multi-domain ferroelectric crystal: as one domain…
Magnetic field-driven domain wall motion in an ultrathin Pt/Co(0.45nm)/Pt ferromagnetic film with perpendicular anisotropy is studied over a wide temperature range. Three different pinning dependent dynamical regimes are clearly identified:…
The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in…
The presence of domains in ferroic materials can negatively affect their macroscopic properties and hence their usefulness in device applications. From an experimental perspective, measuring materials comprising multiple domains can…
We study the kinetic roughening of a driven domain wall between spin-up and spin-down domains for a model with non-conserved order parameter and quenched disorder. To understand the scaling behavior of this interface we construct an…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer…
Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a…
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the…
We study the asymptotic scaling properties of domain wall networks with three different tensions in various cosmological epochs. We discuss the conditions under which a scale-invariant evolution of the network (which is well established for…
The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the…
For over 70 years, ferroelectric materials have been remaining one of the central research topics for condensed matter physics and material science, the interest driven both by fundamental science and applications. However, ferroelectric…
The roughness properties of two-dimensional fracture surfaces as created by the slow failure of random fuse networks are considered and compared to yield surfaces of perfect plasticity with similar disorder. By studying systems up to a…
The depolarization fields set up to due to uncompensated surface charges in a ferroelectric thin film can suppress the ferroelectric phase below a critical size. Recent experiments show that 180 degree domain structures can help to…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
The structure of 180-degree uncharged rotational domain wall in a multiaxial ferroelectric film is studied within the framework of analytical Landau-Ginzburg-Devonshire (LGD) approach. The Finite Element Modelling (FEM) is used to solve…
The effect of impurity and domain-wall scattering on the electrical conductivity of disordered mesoscopic magnetic thin films is studied by use of computer simulation. The results indicate a reduction of resistivity due to a domain wall,…