Related papers: Multiscaling analysis of ferroelectric domain wall…
Many systems of both theoretical and applied interest display multi-affine scaling at small length scales. We demonstrate analytically and numerically that when vertical discontinuities are introduced into a self-affine surface, the surface…
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as…
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate…
Although pinning of domain walls in ferromagnets is ubiquitous, the absence of an appropriate characterization tool has limited the ability to correlate the physical and magnetic microstructures of ferromagnetic films with specific pinning…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…
The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
The geometry and morphology of magnetic domain walls (DWs) are closely related to their dynamics when driven by external forces. Under some reliable approximations DWs can be considered self-affine interfaces, so universal laws govern their…
We show how the periodicity of 180^{o} domains as a function of crystal thickness scales with the thickness of the domain walls both for ferroelectric and for ferromagnetic materials. We derive an analytical expression for the universal…
Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…
HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase…
An evidence that the dielectric ageing in the polydomain Pb(Zr0.45Ti0.55)O3 thin films is controlled by progressive pinning of 180 domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study…
We introduce an equivalent-circuit element based on the theory of interface pinning in random systems, to analyze the contribution of domain wall motion below the coercive field to the impedance of a ferroelectric, as a function of…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and…
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related…
The cross-tie domain wall structure in micrometre and sub-micrometre wide patterned elements of NiFe, and a thickness range of 30 to 70nm, has been studied by Lorentz microscopy. Whilst the basic geometry of the cross-tie repeat units…
Scaling laws for characteristic length scales (in time or in the model parameters) are both experimentally robust and accessible for rigorous analysis. In multiscale situations cross--overs between different scaling laws are observed. We…