Related papers: Multiscaling analysis of ferroelectric domain wall…
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…
We investigate theoretically the polarization switching kinetics in ferroelectric thin films. In such substances, the domain walls are pinned by (usually dipole) defects, which are present also in ordered samples as technologically…
We use shear-mode Raman imaging to track ferroelectric switching in multilayer 3$R$-MoS$_2$. Within a single flake, mechanically segmented regions respond independently and follow distinct pathways. Partially polarized end states indicate…
We present a quantitative investigation of magnetic domain wall pinning in thin magnets with perpendicular anisotropy. A self-consistent description exploiting the universal features of the depinning and thermally activated sub-threshold…
Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a…
The creep motion of domain walls driven by external fields in magnetic thin films is described by universal features related to the underlying depinning transition. One key parameter in this description is the roughness exponent…
The design of the interfacial bondings at metal-oxide interfaces yields exciting new phenomena and can be a route to sustain, and even promote, ferroelectricity at the nanoscale. We study the impact of these interfaces on the nature of the…
Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first principles calculations, we characterize all different types of domain walls forming on…
Room temperature coexistence of ferromagnetism and ferroelectricity in a thin film of a novel material of nominal composition PbTi0.5Fe0.5O3-d is probed by standard ferroelectric and ferromagnetic hysteresis loop measurements and by…
Motivated by the observed thickness-scaling of the coercive field in ferroelectric films over five decades, we develop a statistical approach towards understanding the conceptual underpinnings of this behavior. Here the scaling exponent is…
The domain morphology of weakly disordered ferromagnets, quenched from the high-temperature phase to the low-temperature phase, is studied using numerical simulations. We find that the geometrical properties of the coarsening domain…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
When subjected to electro-mechanical loading, ferroelectrics see their polarization evolve through the nucleation and evolution of domains. Existing mesoscale phase-field models for ferroelectrics are typically based on a gradient-descent…
Using a multi-resolution technique, we analyze large in-plane fracture fronts moving slowly between two sintered Plexiglas plates. We find that the roughness of the front exhibits two distinct regimes separated by a crossover length scale…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
Domain switching pathways in ferroelectric materials visualized by dynamic Piezoresponse Force Microscopy (PFM) are explored via variational autoencoder (VAE), which simplifies the elements of the observed domain structure, crucially…
We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
Intrinsic domain wall width is a fundamental parameter that reflects bulk ferroelectric properties and governs the performance of ferroelectric memory devices. We present closed-form analytical expressions for vertical and lateral…
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are…