Related papers: Multiscaling analysis of ferroelectric domain wall…
Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for…
We investigate the strain dependence of the ferroelectric polarization and the structure of the ferroelectric domain walls in the layered perovskite-related barium fluorides, BaMF$_4$ (M=Mg, Zn). The unusual "geometric ferroelectricity" in…
Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…
The resistivity due to a domain wall in ferromagnetic metallic wire is calculated based on the linear response theory. The interaction between conduction electrons and the wall is expressed in terms of a classical gauge field which is…
Along with experiments, numerical simulations are key to gaining insight into the underlying mechanisms governing domain wall motion in thin ferromagnetic systems. However, a direct comparison between numerical simulation of model systems…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
We examine the substructures of magnetic domain walls (DWs) in [Pt/(Co/Ni)$_M$/Ir]$_N$ multi-layers using a combination of micromagnetic theory and Lorentz transmission electron microscopy (LTEM). Thermal stability calculations of Q=$\pm$1…
A reduction of polarization in ultra-thin ferroelectric films appears to be fundamental to ferroelectricity at the nanoscale. For the model system PbTiO3 on SrTiO3, we report observation of the polarization vs. thickness relation. Distinct…
Far-infrared and terahertz spectroscopy of ferroelectric soft and central modes in thin films on substrates is reviewed. In addition to classical displacive proper ferroelectrics, also incipient and relaxor ferroelectrics and multiferroics…
The interplay between the critical fluctuations and the sample geometry is investigated numerically using thin random-field ferromagnets exhibiting the field-driven magnetisation reversal on the hysteresis loop. The system is studied along…
With Monte Carlo simulations, we investigate the relaxation dynamics with a domain wall for magnetic systems at the critical temperature. The dynamic scaling behavior is carefully analyzed, and a dynamic roughening process is observed. For…
Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
The structural and ferroelectric domain variants of highly-strained BiFeO3 films grown on vicinal LaSrAlO4 substrates were studied by piezoelectric force microscopy and high-resolution X-ray reciprocal space mapping. Through symmetry…
Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future…
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…
The analysis of domain wall dynamics is often simplified to one dimensional physics. For domain walls in thin films, more realistic approaches require the description as two dimensional objects. This includes the study of vortices and…
Shearing transitions of multi-layer molecularly thin-film lubrication systems in variations of the film-substrate coupling strength and the load are studied by using a multiscale method. Three kinds of the interlayer slips found in…