Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions.
@article{arxiv.2202.13442,
title = {Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity},
author = {Asaf Hershkovitz and Elangovan Hemaprabha and Doaa Khorshid and Liyang Ma and Shi Liu and Shai Cohen and Yachin Ivry},
journal= {arXiv preprint arXiv:2202.13442},
year = {2024}
}