Related papers: Multiscaling analysis of ferroelectric domain wall…
Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones…
Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric…
The polarization and the susceptibility of a ferroelectric multilayer with a non-ferroelectric slab are investigated within the framework of transverse Ising model with a four-spin interaction term. The effect of the thickness and the…
Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two…
Graphene is a two-dimensional carbon material which exhibits exceptional properties, making it highly suitable for a wide range of applications. Practical graphene fabrication often yields a polycrystalline structure with many inherent…
We investigate the correlation between roughness, remanence and coercivity in Co/Ni films grown on Cu seed layers of varying thickness. Increasing the Cu seed layer thickness of Ta/Cu/8x[Co/Ni] thin films increases the roughness of the…
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…
Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In…
Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the…
Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly…
Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate…
We wish to understand the macroscopic plastic behaviour of metals by upscaling the micro-mechanics of dislocations. We consider a highly simplified dislocation network, which allows our microscopic model to be a one dimensional particle…
Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects,…
The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and…
Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric…
We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence…
The contrast mechanism for ferroelectric domain imaging via piezoresponse force microscopy (PFM) is investigated. A novel analysis of PFM measurements is presented which takes into account the background caused by the experimental setup.…
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…
The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical…
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…