Related papers: Multiscaling analysis of ferroelectric domain wall…
Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in…
Ferroelectrics form domain patterns that minimize their energy subject to imposed boundary conditions. In a linear, constrained theory, that neglects domain wall energy, periodic domain patterns in the form of multi-rank laminates can be…
We study the effect of depolarization field related with inhomogeneous polarization distribution, strain and surface energy parameters on a domain wall profile near the surface of a ferroelectric film within the framework of…
Domain wall dynamics in ferromagnets is complicated by internal degrees of freedom of the domain walls. We develop a model of domain walls in disordered thin films with perpendicular magnetic anisotropy capturing such features, and use it…
The elastic interaction between kinks (and antikinks) within domain walls plays a pivotal role in shaping the domain structure, and their dynamics. In bulk materials, kinks interact as elastic monopoles, dependent on the distance between…
Barkhausen effect in ferromagnetic materials provides an excellent area for investigating scaling phenomena found in disordered systems exhibiting crackling noise. The critical dynamics is characterized by random pulses or avalanches with…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
We discuss ferroelectric phase transitions into single- and multidomain states in very thin films using continuous theory. It is shown that in nearly cubic ferroelectrics the domain state may survive down to atomic film thicknesses, unlike…
Multilayer "ferromagnet-layered antiferromagnet" (Fe/Cr) structures frustrated due to the roughness of layer interfaces are studied by numerical modeling methods. The "thickness-roughness" phase diagrams for the case of thin ferromagnetic…
We show that smoothing of multiaffine surfaces that are generated by simulating a crosslinked polymer gel by a frustrated, triangular network of springs of random equilibrium lengths [G.M. Buend{\'\i}a, S.J. Mitchell, P.A. Rikvold, Phys.…
The structure of a single antiparallel ferroelectric domain wall in LiNbO3 is quantitatively mapped by piezoelectric force microscopy (PFM) with calibrated probe geometry. The PFM measurements are performed for 49 probes with the radius…
We report on spin atomistic calculations used to model static and dynamic magnetic properties of inhomogeneous ultrathin iron films. Active magnetic layers in next-generation spintronic devices are becoming so thin that they exhibit some…
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm)…
We study the dynamics of head-to-head domain walls separating in-plane domains in a disordered ferromagnetic thin film. The competition between the domain wall surface tension and dipolar interactions induces a crossover between a rough…
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale…
For forty years researchers on ferroelectric switching have used the Kay-Dunn theory to model the thickness-dependence of the coercive field; it works surprisingly well, despite the fact that it is based upon homogeneous nucleation and a…
In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed.…
We study numerically the coarsening kinetics of a two-dimensional ferromagnetic system with aleatory bond dilution. We show that interfaces between domains of opposite magnetisation are fractal on every lengthscale, but with different…
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics…
Engraving trenches on the surfaces of ultrathin ferroelectric (FE) films and superlattices promises control over the orientation and direction of FE domain walls (DWs). Through exploiting the phenomenon of DW-surface trench (ST) parallel…