Related papers: Tunneling in double barrier junctions with 'hot sp…
Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes, and at low…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel…
We investigate heat and charge transport through a diffusive SIF1F2N tunnel junction, where N (S) is a normal (superconducting) electrode, I is an insulator layer and F1,2 are two ferromagnets with arbitrary direction of magnetization. The…
We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct…
We employ a magnetocapacitance technique to study the spectrum of the soft two-subband (or double-layer) electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. In this system unbalanced by gate depletion, at…
The Heusler alloy is used as an electrode of magnetic tunneling junctions. The junctions are deposited by magnetron dc sputtering using shadow mask techniques with AlO_{x} as a barrier and cobalt as counter electrode. Measurements of the…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with…
Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…